dual p - channel enhancement mode mosfet features ? low on - resistance ? 70 m ? @v gs = - 4.5v ? 85 m ? @v gs = - 2.5v ? 86 m ? (typ) @v gs = - 1.8v ? low gate threshold voltage, - 0.9 v max ? fast switching speed ? low input/output leakage ? low profile, 0.5mm max height ? totally le ad - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? case: u - dfn2020 - 6 type b ? case material: molded plastic, green molding compound ; ul f lammability classification rating 94v - 0 ? moisture sensitivity : level 1 per j - std - 020 ? terminal connections: see diagram ? terminals: finish C nipdau a nnealed over copper l eadframe ; solderable per mil - std - 202, method 208 e4 ? weight: 0.0065 grams ( a pproximate ) u - dfn2020 - 6 type b b ottom view s 1 g 1 d2 s2 g2 d1 d2 pin1 d1 d 1 s 1 g 1 d 2 s 2 g 2 equivalent circuit s m d ty p e maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 20 v gate - source voltage v gss 12 v drain current (note 5 ) i d - 3.8 a pulsed drain current (note 6 ) i dm - 13 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 5 ) p d 1.4 w therma l resistance, junction to ambient r ? ja 89 c/w operating and storage temperature range t j , t stg - 55 to +150 c m o s f e t cjmpd08 e4 p2 y m
electrical characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 7 drain - source breakdo wn voltage bv dss - 20 v v gs = 0v, i d = - 250 a zero gate voltage drain current i dss - 1 a v ds = - 20 v, v gs = 0v gate - source leakage i gss r 100 r 800 na v gs = r 8v, v ds = 0v v gs = r 12v, v ds = 0v on characteristics (note 7 ) gate threshold vol tage v gs(th) - 0.45 - 0.9 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) 54 68 86 70 85 m ? v gs = - 4.5v, i d = - 2.8 a v gs = - 2.5v, i d = - 2. 0 a v gs = - 1.8v, i d = - 1.0a forward transfer admittance |y fs | 8 s v ds = - 5v, i d = - 2.8a diode forward voltage (note 7 ) v sd 0.7 - 1.2 v v gs = 0v, i s = - 1.6a dynamic characteristics input capacitance c iss 536 pf v ds = - 10v, v gs = 0v f = 1.0mhz output capacitance c oss 68 pf reverse transfer capacitance c rss 59 pf gate resistance r g - 34 - ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge q g - 6.5 - nc v gs = - 4.5 v, v d d = - 10 v, i d = - 1.5 a gate - source charge q gs - 0.8 - nc gate - drain charge q gd - 1.4 - nc turn - on delay time t d(on) - 11.51 - ns v g en = - 4.5 v , v d d = - 10 v , r l = 10
5 g = 6
turn - on rise time t r - 12.09 - ns turn - off delay time t d(off) - 55.34 - ns turn - off fall time t f - 27.54 - ns notes: 5. device mounted on fr - 4 pcb, on minimum recommended, 2oz copper pad layout. 6. repetitive rating, pulse width limited by junction temperature. 7 . short duration pulse test used to minimize self - heating effect. s m d ty p e m o s f e t
0 1 2 3 4 5 fig. 1 typical output characteristics -v , drain-source voltage (v) ds 0 2 4 6 8 10 - i , d r a i n c u r r e n t ( a ) d v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -8.0v gs v = -1.0v gs v = -1.2v gs 0.5 1 1.5 2 0 2 4 6 8 10 - i , d r a i n c u r r e n t ( a ) d fig. 2 typical transfer characteristics -v , gate source voltage (v) gs v = -5v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 7 8 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -2.5v gs v = -4.5v gs v = -1.8v gs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 7 8 -i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 0.03 0.05 0.07 0.09 0.11 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d s m d ty p e m o s f e t 0 1 2 3 4 5 fig. 1 typical output characteristics -v , drain-source voltage (v) ds 0 2 4 6 8 10 - i , d r a i n c u r r e n t ( a ) d v = -1.5v gs v = -2.0v gs v = -2.5v gs v = -4.5v gs v = -8.0v gs v = -1.0v gs v = -1.2v gs 0.5 1 1.5 2 0 2 4 6 8 10 - i , d r a i n c u r r e n t ( a ) d fig. 2 typical transfer characteristics -v , gate source voltage (v) gs v = -5v ds t = -55c a t = 25c a t = 85c a t = 150c a t = 125c a 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 7 8 fig. 3 typical on-resistance vs. drain current and gate voltage -i , drain current (a) d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -2.5v gs v = -4.5v gs v = -1.8v gs 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0 1 2 3 4 5 6 7 8 -i , drain current (a) fig. 4 typical drain-source on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a fig. 5 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j 0.6 0.8 1.0 1.2 1.4 1.6 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d 0.03 0.05 0.07 0.09 0.11 fig. 6 on-resistance variation with temperature -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -4.5v i = -5a gs d v = -2.5v i = -2a gs d
10 100 1,000 10,000 c , c a p a c i t a n c e ( p f ) 0 4 8 12 16 20 fig. 7 typical capacitance -v , drain-source voltage (v) ds f = 1mhz c iss c oss c rss fig. 8 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = -250a d i = -1ma d 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current 0 2 4 6 8 10 - i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 4 8 12 16 20 -v , drain-source voltage (v) fig. 10 typical drain-source leakage current vs. voltage ds 10,000 - i , l e a k a g e c u r r e n t ( n a ) d s s 1,000 100 10 1 t = 150c a t = 125c a t = 85c a t = 25c a q , total gate charge (nc) g figure 11 gate-charge characteristics - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 v = -10v ds i = -1.5a d s m d ty p e m o s f e t 10 100 1,000 10,000 c , c a p a c i t a n c e ( p f ) 0 4 8 12 16 20 fig. 7 typical capacitance -v , drain-source voltage (v) ds f = 1mhz c iss c oss c rss fig. 8 gate threshold variation vs. ambient temperature -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) a 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = -250a d i = -1ma d 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 -v , source-drain voltage (v) sd fig. 9 diode forward voltage vs. current 0 2 4 6 8 10 - i , s o u r c e c u r r e n t ( a ) s t = 25c a 0 4 8 12 16 20 -v , drain-source voltage (v) fig. 10 typical drain-source leakage current vs. voltage ds 10,000 - i , l e a k a g e c u r r e n t ( n a ) d s s 1,000 100 10 1 t = 150c a t = 125c a t = 85c a t = 25c a q , total gate charge (nc) g figure 11 gate-charge characteristics - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 v = -10v ds i = -1.5a d
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) j a ja t duty cycle, d = t /t 1 2 r (t) = r(t) * r t ja ja t ja r = 146c/w t p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = 0.9 fig. 12 transient thermal response t , pulse duration time (s) 1 package outline dimensions suggested pad layout u - dfn2020 - 6 type b dim min max typ a 0.545 0.605 0.575 a1 0 0.05 0.02 a3 0.13 b 0.20 0.30 0.25 d 1.95 2.075 2.00 d 0.45 d2 0.50 0.70 0.60 e 0.65 e 1.95 2.075 2.00 e2 0.90 1.10 1.00 f 0.15 l 0.25 0.35 0.30 z 0.225 all dimensions in mm dimensions value (in mm) z 1.67 g 0.20 g1 0.40 x1 1.0 x2 0.45 y 0.37 y1 0.70 c 0.65 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1 s m d ty p e m o s f e t 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 0.001 0.01 0.1 1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e t - t = p * r (t) j a ja ? duty cycle, d = t /t 1 2 r (t) = r(t) * r ? ja ja ? ja r = 146c/w ? p(pk) t 1 t 2 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = 0.9 fig. 12 transient thermal response t , pulse duration time (s) 1 seating plane d e pin#1 id l b d2 e2 e a1 a a3 f z f d g g y c z y1 x2 x1 g1
|
